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| 2SA673 transistor (pnp) feature power dissipation p cm : 0.4 w (tamb=25 ) collector current i cm: -0.5 a collector-base voltage v (br)cbo : -35 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= -10 a , i e =0 -35 v collector-emitter breakdown voltage v(br) ceo i c =-1 ma , i b =0 -35 v emitter-base breakdown voltage v(br) ebo i e =-10 a, i c =0 -4 v collector cut-off current i cbo v cb = -20 v , i e =0 -0.5 a h fe(1) * v ce =-3v, i c = -10ma 60 320 dc current gain h fe(2) v ce =-3 v, i c =-500ma 10 collector-emitter saturation voltage v cesat * i c = -150ma, i b =-15ma -0.6 v base-emitter voltage v be v ce =-3 v, i c =-10ma -0.75 v * measured using pulse classification of h fe(1) rank b c d range 60-120 100-200 160-320 1 2 3 to-92 1. emitter 2. collector 3. base 2SA673 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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